| PART |
Description |
Maker |
| 2SA1759 A5800340 2SC4620 2SC4505 2SA1759T100P |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
High-Voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A)
High-Coltage Switching Transistor
|
ROHM
|
| 4126L-T60-T 4126 4126-T60-T |
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 200 V, NPN, Si, POWER TRANSISTOR, TO-126
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 高频开关晶体管BALLASTERS
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| MMBT3904 SMBT3904 SMBT3904/MMBT3904 |
Switching Transistors - NPN Silicon Switching Transistor with high current gain
|
INFINEON[Infineon Technologies AG]
|
| FS100VSJ-03F FS100VSJ-03F-A1 FS100VSJ-03F-T11 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Nch Power MOS FET
|
Renesas Electronics Corporation
|
| FX20ASJ-03F FX20ASJ-03F-T13 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
| H5N2801P |
Silicon N Channel MOS FET High Speed Power Switching
Transistors>Switching/MOSFETs
|
Renesas Electronics Corporation
|
| H7N0608AB |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H7N0312ABNBSP H7N0312AB |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| H5N2512CF |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SC5161TLB 2SC5161 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
µP Supervisory Circuits in 4-Bump (2 x 2) Chip-Scale Package
High voltage switching transistor (400V, 2A)
|
Rohm
|
